Gallium nitride (GaN) transistors have evolved as a better-performing alternative to silicon-based transistors due to their ability to fabricate more compact devices for a given resistance value and breakdown voltage when compared to silicon devices. These power devices have extremely low resistance and high-frequency switching capabilities. High-efficiency power supplies, electric vehicles (EV), hybrid electric vehicles (HEV), photovoltaic inverters, and RF switching all make use of these properties.
Increased demand for GaN Power Device Market in radio frequency equipment; increased adoption in the telecommunications industry; and a surge in demand for AC fast chargers, LiDAR, and wireless power are driving the GaN power device market growth. Furthermore, these devices are more advantageous than silicon devices. The preference for silicon carbide (SiC) in high-voltage semiconductor applications, on the other hand, limits the market growth. On the contrary, the requirement for GaN Power Device Marketin electric and hybrid vehicles creates new opportunities for market participants.
According
to the GaN power device market trend, the decrease in prices of GaN power
devices is expected to drive their adoption across various industry verticals.
Recently introduced GaN power transistors and modules have a wide band gap and
provide comparable performance to SiC while costing significantly less. This
cost reduction is possible because GaN Power Device
Market can
be developed on silicon substrates, which are more readily available and less
expensive than SiC. GaN-on-silicon devices are expected to achieve price
parity, if not outperform, silicon metal-oxide-semiconductor field-effect
transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). As a
result, the GaN power device market is expected to experience a rapid increase
in revenue.
Key Players
Cree Inc., Efficient Power Conversion (EPC) Corporation,
Infineon Technologies, GaN Systems Inc., Macom, Microsemi Corporation,
Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo, Inc., and
Toshiba Electronic Devices & Storage Corporation are some of the key
players in the GaN power devices market.
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